Physical model for enhanced interface-trap formation at low dose rates

By S. Rashkeev, C. Cirba, D. Fleetwood, peixiong zhao, S. C. Witczak, A. Michez, S. Pantelides. 2002

192 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/611ec7b39efbd736a9ab9b76b117b2c0068b884f

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. D. Fleetwood
2. Hugh J. Barnaby

In Materials Chemistry

1. D. Fleetwood

Citations in the corpus

• ELDRS in bipolar linear circuits: A review (2008, methodology): “[22], the space charge effect is used to explain the ELDRS mechanism for Nit by introducing differences in the hole and proton effective mobilities in the oxide.”
• Evolution of Total Ionizing Dose Effects in MOS Devices With Moore’s Law Scaling (2018, unknown): “microelectronic materials and devices [32], [73], [151]–[157].”
• Total-Ionizing-Dose Effects in Modern CMOS Technologies (2006, background): “regarding the formation of radiation-induced interface traps may be found in [20], [21], [34], and [37].”