Soft Error Susceptibilities of 22 nm Tri-Gate Devices

By N. Seifert, Balkaran Gill, Shah Jahinuzzaman, J. Basile, Vinod Ambrose, Q. Shi, Randy Allmon, Arkady Bramnik. IEEE Transactions on Nuclear Science, 2012

192 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Hardware and Architecture

View Paper: https://www.semanticscholar.org/paper/b1c12a804c839484de33b5ad9b0b262d411cc7c4

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. D. Fleetwood
2. Pascale Gouker
3. Véronique Ferlet-Cavrois
4. S. Keckler
5. Lloyd W. Massengill
6. Joel S. Emer
7. R. Lacoe
8. Tushar Krishna

In Hardware and Architecture

1. Pascale Gouker
2. Véronique Ferlet-Cavrois
3. S. Keckler
4. Joel S. Emer
5. Lloyd W. Massengill
6. R. Lacoe
7. Onur Mutlu

Citations in the corpus

• Understanding Error Propagation in Deep Learning Neural Network (DNN) Accelerators and Applications (2017, result): “than storage elements shown in recent studies [22, 50].”
• Single Event Transients in Digital CMOS—A Review (2013, background): “Scaling also limits the spatial charge collection volumes associated with each node with a concomitant reduction in DSETs, as observed by Seifert et al. in 22-nm tri-gate devices [144].”
• Radiation Effects in Advanced Multiple Gate and Silicon-on-Insulator Transistors (2013, background): “[110] have shown first promising SER measurements of bulk-FinFETs based circuits.”