Hugh J. Barnaby
IEEE Transactions on Nuclear Science · 2006
A researcher in the Science corpus: 1 paper; trusts 0 researchers and is trusted by 1 researcher here, as inferred from the citation graph.
Whom Hugh J. Barnaby trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Hugh J. Barnaby overall
Papers from Hugh J. Barnaby's perspective
Ordered by how strongly the researchers Hugh J. Barnaby trusts endorse each paper. Same corpus, a different order for every researcher.
- Cramming More Components Onto Integrated Circuits
- Nonuniform total-dose-induced charge distribution in shallow-trench isolation oxides (IEEE Transactions on Nuclear Science)
- Physical model for enhanced interface-trap formation at low dose rates
- Unified model of hole trapping, 1/f noise, and thermally stimulated current in MOS devices
- New Insights Into Single Event Transient Propagation in Chains of Inverters—Evidence for Propagation-Induced Pulse Broadening (IEEE Transactions on Nuclear Science)
- Low Energy Proton Single-Event-Upset Test Results on 65 nm SOI SRAM (IEEE Transactions on Nuclear Science)
- Production and propagation of single-event transients in high-speed digital logic ICs (IEEE Transactions on Nuclear Science)
- Statistical Analysis of the Charge Collected in SOI and Bulk Devices Under Heavy lon and Proton Irradiation—Implications for Digital SETs (IEEE Transactions on Nuclear Science)
- Radiation hardness of gallium nitride
- Multiple-gate SOI MOSFETs
Their papers
- Total-Ionizing-Dose Effects in Modern CMOS Technologies (2006) — 647 citations