Gareth Roy
Electrical and Electronic Engineering · 2006–2011
A researcher in the Science corpus: 3 papers; trusts 5 researchers and is trusted by 0 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 20 citations into it
Whom Gareth Roy trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Papers from Gareth Roy's perspective
Ordered by how strongly the researchers Gareth Roy trusts endorse each paper. Same corpus, a different order for every researcher.
- Intrinsic parameter fluctuations in decananometer MOSFETs introduced by gate line edge roughness
- Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: a 3-D density-gradient simulation study
- Intrinsic threshold voltage fluctuations in decanano MOSFETs due to local oxide thickness variations
- Temperature-Dependent Thermal Conductivity of Undoped Polycrystalline Silicon Layers
- High-performance CMOS variability in the 65-nm regime and beyond (IBM Journal of Research and Development)
- Grain-Orientation Induced Work Function Variation in Nanoscale Metal-Gate Transistors—Part I: Modeling, Analysis, and Experimental Validation (IEEE Transactions on Electron Devices)
- AND T
- RTS amplitudes in decananometer MOSFETs: 3-D simulation study
- Γ and B
- Process Technology Variation (IEEE Transactions on Electron Devices)
Their papers
- Statistical Threshold-Voltage Variability in Scaled Decananometer Bulk HKMG MOSFETs: A Full-Scale 3-D Simulation Scaling Study (2011) — 136 citations
- Simulation Study of Individual and Combined Sources of Intrinsic Parameter Fluctuations in Conventional Nano-MOSFETs (2006) — 297 citations
- Poly-Si-Gate-Related Variability in Decananometer MOSFETs With Conventional Architecture (2007) — 143 citations