David Esseni

Electrical and Electronic Engineering · 2001–2013

A researcher in the Science corpus: 5 papers; trusts 2 researchers and is trusted by 3 researchers here, as inferred from the citation graph.

Subfields

• Electrical and Electronic Engineering — 26 citations into it; #10,149 of 16,539 by trust here, #9,210 by citations

Whom David Esseni trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

1. Massimo V. Fischetti
2. Antonio Abramo
3. Saul A. Teukolsky
4. Mark S. Lundstrom
5. Asen Asenov

Who trusts David Esseni overall

1. Seonghoon Jin
2. Antonio Abramo
3. Enrico Sangiorgi
4. Luca Selmi
5. Massimo V. Fischetti

Papers from David Esseni's perspective

Ordered by how strongly the researchers David Esseni trusts endorse each paper. Same corpus, a different order for every researcher.

1. Intrinsic threshold voltage fluctuations in decanano MOSFETs due to local oxide thickness variations
2. Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: a 3-D density-gradient simulation study
3. On the performance limits for Si MOSFETs: a theoretical study
4. Role of scattering in nanotransistors
5. Numerical recipes in C
6. Modeling of electron mobility degradation by remote Coulomb scattering in ultrathin oxide MOSFETs
7. Impact of gate direct tunneling current on circuit performance: a simulation study
8. Essential physics of carrier transport in nanoscale MOSFETs (International Conference on Simulation of Semiconductor Processes and Devices)
9. Silicon-on-Nothing (SON)-an innovative process for advanced CMOS
10. Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs (IEEE Electron Device Letters)

Their papers

• Low field electron and hole mobility of SOI transistors fabricated on ultrathin silicon films for deep submicrometer technology application (2001) — 133 citations
• Physically based modeling of low field electron mobility in ultrathin single- and double-gate SOI n-MOSFETs (2003) — 163 citations
• Understanding quasi-ballistic transport in nano-MOSFETs: part I-scattering in the channel and in the drain (2005) — 150 citations
• Modeling of electron mobility degradation by remote Coulomb scattering in ultrathin oxide MOSFETs (2003) — 138 citations
• Inverters With Strained Si Nanowire Complementary Tunnel Field-Effect Transistors (2013) — 179 citations