Enhancement-Mode GaAs MOSFETs With an $\hbox{In}_{0.3} \hbox{Ga}_{0.7}\hbox{As}$ Channel, a Mobility of Over 5000 $ \hbox{cm}^{2}/\hbox{V} \cdot \hbox{s}$, and Transconductance of Over 475…

By R. Hill, D. Moran, Xu Li, Haiping Zhou, D. Macintyre, S. Thoms, Asen Asenov, P. Zurcher, K. Rajagopalan, J. Abrokwah and 3 more. IEEE Electron Device Letters, 2007

144 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/c9386b004bec74cf35761de173683616610f3c34