Fringing fields in sub-0.1 μm fully depleted SOI MOSFETs: optimization of the device architecture

By T. Ernst, C. Tinella, C. Raynaud, S. Cristoloveanu. 2002

153 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/657fc483b976794dc0a1cc21d420de5436dcda19

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Asen Asenov
2. Andrew R. Brown
3. Xingsheng Wang
4. Gareth Roy

Citations in the corpus

• Statistical variability and reliability in nanoscale FinFETs (2011, background): “Relatively thin buried oxide (BOX) and high substrate doping are chosen to decouple drain-induced fringing fields and achieve optimal electrostatic integrity and short-channel effects [5].”
• RF Performance and Small-Signal Parameter Extraction of Junctionless Silicon Nanowire MOSFETs (2011, background): “insulator MOSFETs [8]–[10], and silicon nanowire (SNW) MOSFETs [11]–[21] have been proposed as the solutions”