Xingsheng Wang

Electrical and Electronic Engineering · 2011

A researcher in the Science corpus: 2 papers; trusts 3 researchers and is trusted by 0 researchers here, as inferred from the citation graph.

Subfields

Whom Xingsheng Wang trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

  1. Asen Asenov
  2. Savas Kaya
  3. Andrew R. Brown

Papers from Xingsheng Wang's perspective

Ordered by how strongly the researchers Xingsheng Wang trusts endorse each paper. Same corpus, a different order for every researcher.

  1. Intrinsic parameter fluctuations in decananometer MOSFETs introduced by gate line edge roughness
  2. Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: a 3-D density-gradient simulation study
  3. High-performance CMOS variability in the 65-nm regime and beyond (IBM Journal of Research and Development)
  4. Process Technology Variation (IEEE Transactions on Electron Devices)
  5. Fringing fields in sub-0.1 μm fully depleted SOI MOSFETs: optimization of the device architecture
  6. Impact of Line-Edge Roughness on FinFET Matching Performance (IEEE Transactions on Electron Devices)
  7. Statistical Threshold-Voltage Variability in Scaled Decananometer Bulk HKMG MOSFETs: A Full-Scale 3-D Simulation Scaling Study (IEEE Transactions on Electron Devices)
  8. Grain-Orientation Induced Work Function Variation in Nanoscale Metal-Gate Transistors—Part I: Modeling, Analysis, and Experimental Validation (IEEE Transactions on Electron Devices)
  9. Modeling line edge roughness effects in sub 100 nanometer gate length devices (International Conference on Simulation of Semiconductor Processes and Devices)
  10. Simulation Study of Individual and Combined Sources of Intrinsic Parameter Fluctuations in Conventional Nano-MOSFETs (IEEE Transactions on Electron Devices)

Their papers