Gabriela Slavcheva

2001–2003

A researcher in the Science corpus: 2 papers; trusts 2 researchers and is trusted by 3 researchers here, as inferred from the citation graph.

Whom Gabriela Slavcheva trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

1. Asen Asenov

Who trusts Gabriela Slavcheva overall

1. Asen Asenov
2. Gareth Roy

Papers from Gabriela Slavcheva's perspective

Ordered by how strongly the researchers Gabriela Slavcheva trusts endorse each paper. Same corpus, a different order for every researcher.

1. AND T
2. RTS amplitudes in decananometer MOSFETs: 3-D simulation study
3. Intrinsic parameter fluctuations in decananometer MOSFETs introduced by gate line edge roughness
4. Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: a 3-D density-gradient simulation study
5. Γ and B
6. Intrinsic threshold voltage fluctuations in decanano MOSFETs due to local oxide thickness variations
7. Temperature-Dependent Thermal Conductivity of Undoped Polycrystalline Silicon Layers
8. Process Technology Variation (IEEE Transactions on Electron Devices)
9. Fringing fields in sub-0.1 μm fully depleted SOI MOSFETs: optimization of the device architecture
10. Impact of Line-Edge Roughness on FinFET Matching Performance (IEEE Transactions on Electron Devices)

Their papers

• Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: a 3-D density-gradient simulation study (2001) — 237 citations
• Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs (2003) — 599 citations