Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs
By Asen Asenov, Andrew R. Brown, John H. Davies, Savas Kaya, Gabriela Slavcheva. 2003
599 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/de2d660a6513e96d4de5070927101447f6b49fc1
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In Electrical and Electronic Engineering
- Gareth Roy
- Asen Asenov
- Andrew R. Brown
- Fikru Adamu-Lema
- Scott Roy
- Tsu-Jae King Liu
- Sung Hwan Kim
- Yang Yang
Citations in the corpus
- Study of Random Dopant Fluctuation Effects in Germanium-Source Tunnel FETs (2011, background): “variability include random dopant fluctuations (RDFs), gate line-edge roughness, and gate work function variation [8], [9].”
- Silicon quantum electronics (2012, unknown): “44 (Asenov et al., 2003).”
- Design Considerations of Silicon Nanowire Biosensors (2007, unknown): “This effect, which is well known as discrete dopant fluctuations in nanoscale transistor design [30], [31] , is often overlooked in biosensor design considerations.”
- Simulation Study of Individual and Combined Sources of Intrinsic Parameter Fluctuations in Conventional Nano-MOSFETs (2006, methodology): “The intrinsic parameter fluctuations introduced by the discreteness of charge and matter, which cannot be eliminated by tightening the process control, have an increasing contribution to the variability of the scaled devices [ 4 ].”
- High-performance CMOS variability in the 65-nm regime and beyond (2006, unknown): “simulations have generally shown this component to be small compared with the atomistic doping effect [ 3 , 15].”
- Poly-Si-Gate-Related Variability in Decananometer MOSFETs With Conventional Architecture (2007, unknown): “[1]–[3].”
- Analysis of Self-Heating Effects in Ultrathin-Body SOI MOSFETs by Device Simulation (2008, background): “, the subthreshold current in a transistor that is nominally OFF) and a large dependence of threshold voltage (VT ) on drain bias, and the variability of VT , due to statistical fluctuations of channel length and of the distribution of the dopant atoms in the channel [4].”