Si/SiGe heterostructure parameters for device simulations

By L. Yang, J. Watling, R. Wilkins, M. Boriçi, J. Barker, Asen Asenov, Scott Roy. 2004

166 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/838e9a203a54689a6fd7f8ce1ed433beda8a1f4e

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Kaustav Banerjee
2. Yasin Khatami

In Electrical and Electronic Engineering

1. Kaustav Banerjee
2. Yasin Khatami
3. Hong Li
4. Alan C. Seabaugh
5. Navin Srivastava
6. Qin Zhang
7. Chuan Xu

Citations in the corpus

• Steep Subthreshold Slope n- and p-Type Tunnel-FET Devices for Low-Power and Energy-Efficient Digital Circuits (2009, background): “bandgap decreases as x is increased [32], and considering the exponential dependence of the B2B tunneling probability on Eg in (1), higher tunneling current can be achieved by using the SiGe layer.”