Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: a 3-D density-gradient simulation study
By Asen Asenov, Gabriela Slavcheva, Andrew R. Brown, John H. Davies, S. Saini. 2001
237 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/50d93c744cc9038e1f46bb8f66b40b18998adf45
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In Electrical and Electronic Engineering
- Asen Asenov
- Andrew R. Brown
- Gareth Roy
- Savas Kaya
- John H. Davies
- Xingsheng Wang
- Fikru Adamu-Lema
- Scott Roy
Citations in the corpus
- Physically based modeling of low field electron mobility in ultrathin single- and double-gate SOI n-MOSFETs (2003, background): “The scaling of the conventional, bulk MOSFETs to this range of channel lengths is extremely hard and requires doping concentrations well above cm [2]‐[4], that degrade effective mobility ( ) [5], [6], result in large source/drain to bulk capacitances, and, given the very small channel areas, can ind”
- Intrinsic threshold voltage fluctuations in decanano MOSFETs due to local oxide thickness variations (2002, methodology): “As described in [15], the DG quantum corrections have b en carefully calibrated in the direction normal to the channel against rigorous one-dimensional (1-D) full-band Poisson– Schrödinger simulations [13].”
- Simulation Study of Individual and Combined Sources of Intrinsic Parameter Fluctuations in Conventional Nano-MOSFETs (2006, methodology): “MOSFETs, it is sufficient to solve, self-consistently, Poisson’s equation, the electron current continuity equation and the DG electron equation of state of the following [ 31 ]:”
- Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs (2003, background): “Further, we concentrate on effects related to quantum mechanics [59] and the polysilicon gate [54].”
- Statistical Threshold-Voltage Variability in Scaled Decananometer Bulk HKMG MOSFETs: A Full-Scale 3-D Simulation Scaling Study (2011, background): “threshold voltage due to RDD (being by far the dominant factor) is proportional to the EOT [6], [31].”