Process Technology Variation

By Kelin J. Kuhn, Martin D. Giles, D. Becher, P. Kolar, A. Kornfeld, Roza Kotlyar, Sean Ma, A. Maheshwari, S. Mudanai. IEEE Transactions on Electron Devices, 2011

348 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Hardware and Architecture

View Paper: https://www.semanticscholar.org/paper/169c4f95a5bf4ac44fb69946ebccbcb643e15c77

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Asen Asenov
2. Andrew R. Brown
3. Xingsheng Wang
4. Kelin J. Kuhn
5. Gareth Roy
6. Bevan M. Baas
7. Aaron Stillmaker
8. Qiang Li

Citations in the corpus

• Considerations for Ultimate CMOS Scaling (2012, background): “Comparison of recent random variation (AVT) values from the literature, illustrating improvement with high-k/metal gate and undoped structures, and the relative equivalence of all fully depleted technologies [63].”
• Statistical variability and reliability in nanoscale FinFETs (2011, background): “The distributions of threshold-voltage (VT) in the three FinFET designs show that the overall VT variability is dramatically reduced compared to planar bulk MOSFETs [1][2], but the new variability source, fin-edge roughness, contributes considerable variability.”