Simulation Study of Individual and Combined Sources of Intrinsic Parameter Fluctuations in Conventional Nano-MOSFETs

By Gareth Roy, Andrew R. Brown, Fikru Adamu-Lema, Scott Roy, Asen Asenov. IEEE Transactions on Electron Devices, 2006

297 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/686e6bea9c4207f376a80b260839aadb937745b1

How researchers see this paper

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In Electrical and Electronic Engineering

1. Gareth Roy
2. Xingsheng Wang
3. Asen Asenov
4. Andrew R. Brown

Citations in the corpus

• Statistical Threshold-Voltage Variability in Scaled Decananometer Bulk HKMG MOSFETs: A Full-Scale 3-D Simulation Scaling Study (2011, background): “poly-Si gate, without MGG) [29], [30] and are widely referred to in the context of devices, circuits, and systems design and optimization.”