Statistical Threshold-Voltage Variability in Scaled Decananometer Bulk HKMG MOSFETs: A Full-Scale 3-D Simulation Scaling Study

By Xingsheng Wang, A. Brown, N. Idris, S. Markov, Gareth Roy, Asen Asenov. IEEE Transactions on Electron Devices, 2011

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FinFET Versus Gate-All-Around Nanowire FET: Performance, Scaling, and Variability (2018, methodology): “Such method is thought to be more accurate than the square grains approach [37], [38], especially as the size of the gate decreases and the grain size (GS) dimensions become comparable to the gate length.”
Statistical variability and reliability in nanoscale FinFETs (2011, background): “The distributions of threshold-voltage (VT) in the three FinFET designs show that the overall VT variability is dramatically reduced compared to planar bulk MOSFETs [1][2], but the new variability source, fin-edge roughness, contributes considerable variability.”
Analysis of Threshold Voltage Variability Due to Random Dopant Fluctuations in Junctionless FETs (2012, background): “According to [11], the σVT due to random dopant distribution in properly scaled bulk MOSFETs with W/L = 1 and gate lengths ranging from 35 nm to 13 nm lies between 40 mV and 80 mV, which is well below the values found in this paper for the same gate length.”