Modeling and minimization of PMOS NBTI effect for robust nanometer design

By Rakesh Vattikonda, Wenping Wang, Yu Cao. 2006 43rd ACM/IEEE Design Automation Conference, 2006

504 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/0d01f11df48c12ca1b45c0ae907fc9cd65ff9255

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Wenping Wang
2. Sarma B. K. Vrudhula
3. Sarvesh Bhardwaj
4. Frank Liu
5. Shengqi Yang
6. Yu Cao
7. Rakesh Vattikonda
8. Carole-Jean Wu

Citations in the corpus

• The Impact of NBTI Effect on Combinational Circuit: Modeling, Simulation, and Analysis (2010, background): “In the reaction phase, some Si–H bonds at the Si–SiO interface are broken under the vertical electrical stress [9], [14], [15].”
• Predictive Modeling of the NBTI Effect for Reliable Design (2006, background): “A is linearly proportional to the hole density and has an exponential dependence on temperature (T ) and the electric field (Eox = (VGS − Vth)/tox) [9]”
• Compact Modeling and Simulation of Circuit Reliability for 65-nm CMOS Technology (2007, background): “It is also proportional to the density of reaction species, namely holes or hot electrons [4], [7], [29].”