Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers

By Martin A. Green, M. Ho, B. Busch, G. Wilk, T. Sorsch, T. Conard, B. Brijs, W. Vandervorst, P. Raisanen, D. Muller and 2 more. 2002

264 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/cdce07763329e55a065d9da2a84e98435e91ec9a

How researchers see this paper

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In Electrical and Electronic Engineering

1. Kourosh Kalantar-Zadeh
2. Richard B. Kaner
3. Jaroslav Stejskal
4. Miroslava Trchová
5. I. Sapurina
6. Gaoquan Shi

Citations in the corpus

• Trapping, self-trapping and the polaron family (2007, background): “The best uniform amorphous hafnia films are observed to have densities in a range 90–98% of the crystalline value (Green et al 2002).”
• A liquid metal reaction environment for the room-temperature synthesis of atomically thin metal oxides (2017, methodology): “techniques rely on an island-mediated film growth mechanism that results in a minimum film thickness of 3-5 nm (20).”