GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric

By Peide D. Ye, B. Yang, K. Ng, J. Bude, G. Wilk, S. Halder, James C. M. Hwang. 2005

493 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/aa8b354dc3a628eac6831c262a5c64bdb86beeb7