HfO2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition

By Martin M. Frank, G. Wilk, D. Starodub, T. Gustafsson, Eric L. Garfunkel, Y. Chabal, J. Grazul, D. Muller. 2005

309 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/38c268922b102f0cc58f4e944e0c77ff572c65b1

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In Electrical and Electronic Engineering

1. J. D. del Alamo
2. Kei May Lau
3. Qiang Li

In Materials Chemistry

1. J. D. del Alamo

Citations in the corpus

• Electrical and Interfacial Characterization of Atomic Layer Deposited High- $\kappa$ Gate Dielectrics on GaAs for Advanced CMOS Devices (2007, background): “The desorption of those volatile products, which can occur at a temperature of 400 ◦C [15], decreases the interfacial-layer thickness, as well as EOT.”
• Nanometre-scale electronics with III–V compound semiconductors (2011, background): “Transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) soon showed that during ALD, a kind of 'clean-up effect' takes place in which surface oxides are largely eliminate”