Evgeni P. Gusev

Electrical and Electronic Engineering · 2000–2012

A researcher in the Science corpus: 12 papers; trusts 5 researchers and is trusted by 3 researchers here, as inferred from the citation graph.

Subfields

Whom Evgeni P. Gusev trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

  1. G. Wilk
  2. Sufi Zafar
  3. John Robertson
  4. Eduard A. Cartier
  5. Robert M. Wallace

Who trusts Evgeni P. Gusev overall

  1. John Robertson
  2. Sufi Zafar
  3. Arvind Kumar
  4. Eduard A. Cartier
  5. Riikka L. Puurunen
  6. Markku Leskelä
  7. T. Ma

Papers from Evgeni P. Gusev's perspective

Ordered by how strongly the researchers Evgeni P. Gusev trusts endorse each paper. Same corpus, a different order for every researcher.

  1. Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues
  2. Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics (IEEE Electron Device Letters)
  3. Charge trapping in ultrathin hafnium oxide (IEEE Electron Device Letters)
  4. Observation of bulk HfO2 defects by spectroscopic ellipsometry
  5. Charge trapping related threshold voltage instabilities in high permittivity gate dielectric stacks
  6. Six-band k⋅p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness
  7. On the mobility versus drain current relation for a nanoscale MOSFET (IEEE Electron Device Letters)
  8. Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs (2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303))
  9. Performance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO2 gate dielectrics (IEEE Electron Device Letters)
  10. Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation (Digest. International Electron Devices Meeting,)

Their papers