Studying disorder in graphite-based systems by Raman spectroscopy.

By M. Pimenta, G. Dresselhaus, Mildred S. Dresselhaus, Luiz Gustavo Cançado, A. Jorio, Riichiro Saito. Physical Chemistry, Chemical Physics - PCCP, 2007

3,851 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/7a5dd48a99595df65b929ec95ef40bc93a7e0b0b

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Hui‐Ming Cheng
2. Zhong‐Shuai Wu
3. Rodney S. Ruoff
4. R. Young
5. I. Kinloch
6. W. Ren
7. R. Rozada
8. A. Di Bartolomeo

In Materials Chemistry

1. Hui‐Ming Cheng
2. R. Young
3. I. Kinloch
4. A. Jorio
5. Zhenhua Ni
6. Zhong‐Shuai Wu
7. Zexiang Shen
8. Mildred S. Dresselhaus

Citations in the corpus

• Experimental Review of Graphene (2011, background): “The intensity ratio of the G and D band can be used to characterize the number of defects in a graphene sample (Pimenta et al., 2007).”
• Defect engineering of two-dimensional transition metal dichalcogenides (2016, background): “Therefore by tracking the defect activated Raman modes, we can gather important information about structural defects [14, 96, 136, 143, 144].”
• Controllable growth of 1–7 layers of graphene by chemical vapour deposition (2014, result): “161) is small in our sample, which is consistent with large size graphene with good quality [25].”
• Current understanding of the growth of carbon nanotubes in catalytic chemical vapour deposition (2013, neutral): “induced D-band to the graphitic G-band [280-285].”