On the mobility versus drain current relation for a nanoscale MOSFET

By Mark S. Lundstrom. IEEE Electron Device Letters, 2001

238 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/14ee1487d767a2fddcc0e043ac657b2a9afdca69

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Jing Guo
2. Mark S. Lundstrom
3. Ryosho Nakane
4. Evgeni P. Gusev
5. Anisur Rahman
6. Dmitri E. Nikonov
7. Supriyo Datta
8. Avik W. Ghosh

Citations in the corpus

• Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance (2008, background): “[3]–[5] and has been quantitatively analyzed in detail by many research groups”
• Nanoscale Transistors: Device Physics, Modeling and Simulation (2005, background): “It is in this sense that we can say that increasing the mobility will increase the oncurrent of a nanoscale MOSFET [17].”
• Hybrid-orientation technology (HOT): opportunities and challenges (2006, background): “One theory proposed by Lundstrom [52], [53] is that drain–current is directly related to the mean free path in the channel for backscattering, which corresponds to inversion-layer mobility of a long-channel device.”