Charge trapping in ultrathin hafnium oxide

By Wenjuan Zhu, T. Ma, Sufi Zafar, T. Tamagawa. IEEE Electron Device Letters, 2002

162 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/b28b404bb230bea68f4b47db48d941da457a903e

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Eduard A. Cartier
2. Evgeni P. Gusev
3. Arvind Kumar
4. Sufi Zafar
5. T. Ma
6. Nanbo Gong
7. John Robertson
8. Dieter K. Schroder

Citations in the corpus

• Why Is FE–HfO2 More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective (2016, background): “It is well known that decades of research has made HfO2 the prevalent high-k gate dielectric in advanced CMOS transistors [17], [18], where its trap concentration has been reduced to no more than 3 × 1011cm−2 [19], which is at least one order of magnitude less than its PZT (2.”
• Threshold voltage instabilities in high-/spl kappa/ gate dielectric stacks (2005, background): “5 V between the Si and the HfO conduction bands [45], and well within the range required in the proposed model.”
• Threshold Voltage Instabilities in High- Gate Dielectric Stacks (2005, methodology): “The associated C‐V stretchout is not due to interface states [ 45 ], as remains low during this stress sequence.”