Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues

By Evgeni P. Gusev, Eduard A. Cartier, D. Buchanan, M. Gribelyuk, M. Copel, H. Okorn-Schmidt, C. D'Emic. 2001

377 citations recorded by the source corpus.

An overview of our recent work on ultrathin ( , 100 A) films of metal oxides deposited on silicon for advanced gate dielectrics applications will be presented. Data on ultrathin Al O , ZrO , HfO , and Y O will be shown to illustrate the 23 2 2 2 3 complex processing, integration and device-related issues for high dielectric constant ('high-K') materials. Both physical and electrical properties, as well as the effects of pre- and post-deposition treatments will be discussed. © 2001 Elsevier Science B.V. All rights reserved.

Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/1093fd7043769a841737991ea5ee254b7999f240

How researchers see this paper

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In Electrical and Electronic Engineering

1. Eduard A. Cartier
2. Evgeni P. Gusev
3. Arvind Kumar
4. Sufi Zafar
5. T. Ma
6. John Robertson
7. Dieter K. Schroder

In Materials Chemistry

1. Eduard A. Cartier
2. T. Ma
3. Evgeni P. Gusev

Citations in the corpus

• Mobility measurement and degradation mechanisms of MOSFETs made with ultrathin high-k dielectrics (2004, methodology): “MOSFETs are fabricated using standard CMOS process with poly-Si gate, where HfO gate dielectric was deposited by MOCVD on ultrathin nm oxynitride [ 13 ].”
• Effect of Al inclusion in HfO2 on the physical and electrical properties of the dielectrics (2002, result): “... is required to be higher than 15, then it will limit the Al percentage to be less than 30 .It should be noted that the dielectric constants reported in Fig. 4 are the effective dielectric constants that include the effects of the high-k films and the interfacial layers, which are lower than that”
• Charge trapping in ultrathin hafnium oxide (2002, background): “HfO , we found that HfO made with atomic layer deposition (ALD) [ 13 ] and JVD are qualitatively similar, as far as trapping properties are concerned, as exemplified by the data in Fig. 5.”
• Threshold voltage instabilities in high-/spl kappa/ gate dielectric stacks (2005, background): “More details of device fabrication and electrical and physical characterization can be found elsewhere [5], [6], [78].”
• Threshold Voltage Instabilities in High- Gate Dielectric Stacks (2005, background): “More details of device fabrication and electrical and physical characterization can be found elsewhere [ 5 ], [6], [78].”