Threshold Voltage Instabilities in High- Gate Dielectric Stacks

By Sufi Zafar, Arvind Kumar, Evgeni P. Gusev, Eduard A. Cartier. 2005

179 citations recorded by the source corpus.

View Paper: https://www.semanticscholar.org/paper/f43231bf88e6c7da13b34705ae034b589af85307

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

1. J. H. Sim
2. Chang Seo Park
3. C. Young
4. R. Choi
5. Gennadi Bersuker
6. B. Lee
7. S. Nadkarni

Citations in the corpus

• Mechanism of Electron Trapping and Characteristics of Traps in $\hbox{HfO}_{2}$ Gate Stacks (2007, background): “The kinetics of detrapping are similar to trapping [3], [4], [6], [8], while the actual Vt value after detrapping is defined by the detrapping voltage.”