T. Ma

Electrical and Electronic Engineering · IEEE Electron Device Letters · 2000–2018

A researcher in the Science corpus: 6 papers; trusts 6 researchers and is trusted by 1 researcher here, as inferred from the citation graph.

Subfields

Whom T. Ma trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

  1. Tengyu Ma
  2. Johannes Müller
  3. Evgeni P. Gusev

Who trusts T. Ma overall

  1. Sufi Zafar

Papers from T. Ma's perspective

Ordered by how strongly the researchers T. Ma trusts endorse each paper. Same corpus, a different order for every researcher.

  1. Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films
  2. Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues
  3. AND T
  4. Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories (IEEE Transactions on Electron Devices)
  5. Alternative dielectrics to silicon dioxide for memory and logic devices (Nature)
  6. Phase transitions in ferroelectric silicon doped hafnium oxide
  7. Ultrathin high-K gate stacks for advanced CMOS devices (International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224))
  8. Impact of different dopants on the switching properties of ferroelectric hafniumoxide
  9. Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects
  10. BSIM4 gate leakage model including source-drain partition (International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138))

Their papers