Observation of bulk HfO2 defects by spectroscopic ellipsometry

By H. Takeuchi, Daewon Ha, Tsu-Jae King. 2004

237 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/ea81fca6c4fcd18f3cab5bfabb0b1e3fff339632

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Eduard A. Cartier
2. Evgeni P. Gusev
3. Arvind Kumar
4. Sufi Zafar
5. T. Perevalov
6. Vladimir Gritsenko
7. D. Islamov
8. John Robertson

Citations in the corpus

• Threshold voltage instabilities in high-/spl kappa/ gate dielectric stacks (2005, background): “2 V below the HfO conduction band edge [88].”
• Threshold Voltage Instabilities in High- Gate Dielectric Stacks (2005, background): “It is interesting to note that an oxygen related defect band has been identified approximately 1.2 V below the HfO conduction band edge [ 88 ].”
• Electronic properties of hafnium oxide: A contribution from defects and traps (2016, methodology): “12 shows a band diagram that illustrates the optical transitions from the top of the valence band of HfO2 to the empty states due to oxygen vacancies [45].”