Performance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO2 gate dielectrics
By Min Yang, Evgeni P. Gusev, M. Ieong, O. Gluschenkov, Diane C. Boyd, K. K. Chan, Paul M. Kozlowski, C. D'Emic, R. M. Sicina, P. Jamison and 1 more. IEEE Electron Device Letters, 2003
172 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/6057ba0f3a5c10e39919bd25095abfad86ec3329
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In Electrical and Electronic Engineering
Citations in the corpus
- Hybrid-orientation technology (HOT): opportunities and challenges (2006, background): “12 as a function of the mean thickness (tqm) extracted from a large capacitor biased at accumulation, after correction for quantum effect [37].”