High-performance 40nm gate length InSb p-channel compressively strained quantum well field effect transistors for low-power (VCC=0.5V) logic applications

By M. Radosavljevic, T. Ashley, A. Andreev, S. Coomber, G. Dewey, M. Emeny, M. Fearn, D. Hayes, K. Hilton, M. Hudait and 10 more. 2008 IEEE International Electron Devices Meeting, 2008

181 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/c15080c8a3e48ea44de51c3c474608fa82dfeaf8