AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low $R_{\scriptscriptstyle{\rm ON}} \times A$
By Eldad Bahat Treidel, F. Brunner, Oliver Hilt, E. Cho, J. Wurfl, G. Trankle. IEEE Transactions on Electron Devices, 2010
169 citations recorded by the source corpus.
A systematic study of GaN-based heterostructure field-effect transistors with an insulating carbon-doped GaN back barrier for high-voltage operation is presented. The impact of variations of carbon doping concentration, GaN channel thickness, and substrates is evaluated. Tradeoff considerations in on-state resistance versus current collapse are addressed. Suppression of the off-state subthreshold drain-leakage currents enables a breakdown voltage enhancement of over 1000 V with a low on-state resistance. Devices with a 5-μm gate-drain separation on semi-insulating SiC and a 7-μm gate-drain separation on n-SiC exhibit 938 V and 0.39 mΩ·cm<sup>2</sup> and 942 V and 0.39 m Ω·cmcm<sup>2</sup>, respectively. A power device figure of merit of ~ 2.3 × 10<sup>9</sup> V<sup>2</sup>/Ω·cm<sup>2</sup> was calculated for these devices.
Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials
View Paper: https://www.semanticscholar.org/paper/fe0fc4fb47d553c714b2690cf5026946604676c4
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Citations in the corpus
- Fast-Switching GaN-Based Lateral Power Schottky Barrier Diodes With Low Onset Voltage and Strong Reverse Blocking (2012, background): “in GaN-based HEMT devices has already demonstrated the ability to suppress the reverse-bias leakage of Schottky gates and enhance the devices’ breakdown voltage [4].”
- Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Devices (2012, background): “2200874 acceptors (such as carbon [5] or Fe [6]) are often intentionally”
- Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs (2012, background): “but nevertheless has given excellent isolation and power device performance [12], [13].”