Factors Favoring Ferroelectricity in Hafnia: A First-Principles Computational Study

By Rohit Batra, Tran Doan Huan, Jacob L. Jones, G. Rossetti, Rampi Ramprasad. 2017

203 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/5656b687c14561fcccd321b52bd4511869fdce59

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Uwe Schroeder
2. Thomas Mikolajick
3. Tony Schenk
4. James M. LeBeau
5. E. Grimley
6. Hyunsang Hwang
7. Seungyeol Oh
8. Hyungwoo Kim

In Materials Chemistry

1. Uwe Schroeder
2. Thomas Mikolajick
3. Tony Schenk
4. James M. LeBeau
5. E. Grimley
6. Min Hyuk Park

Citations in the corpus

• Large Remnant Polarization in a Wake-Up Free Hf0.5Zr0.5O2 Ferroelectric Film through Bulk and Interface Engineering (2021, background): “These high-temperature phases are achievable in HfO2 thin films at room temperature (RT) [3-14].”
• Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO2 (2017, background): “Immobile boundaries artificially limit the grain size and impart a coherent strain onto the lattices, which is known to play an important role in phase stabilization.(18,19,22) Furthermore, these boundaries can influence domain pinning.”