Comparison of Junctionless and Conventional Trigate Transistors With $L_{g}$ Down to 26 nm
By R. Rios, A. Cappellani, M. Armstrong, A. Budrevich, H. Gomez, R. Pai, N. Rahhal-orabi, Kelin J. Kuhn. IEEE Electron Device Letters, 2011
329 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/fa5a3e33293dde30ddfe99a6111ea84da4fa0395
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In Electrical and Electronic Engineering
Citations in the corpus
- A Quasi-Two-Dimensional Threshold Voltage Model for Short-Channel Junctionless Double-Gate MOSFETs (2012, background): “Note that, for the long-channel device, the coefficients of α and β in (9) and (10) approach zeros, and (14) will be reduced to ω that is identical to the threshold voltage for the long-channel JL double-gate MOSFETs [7], [8].”
- Effect of Band-to-Band Tunneling on Junctionless Transistors (2012, background): “thickness, as compared to inversion-mode devices [8], [10].”
- Scaling of Trigate Junctionless Nanowire MOSFET With Gate Length Down to 13 nm (2012, background): “lower gate capacitances, low leakage current, and simplified processing [6]–[10].”