J. Larson
Electrical and Electronic Engineering · with Snyder · 2006
A researcher in the Science corpus: 1 paper; trusts 2 researchers and is trusted by 1 researcher here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 5 citations into it; #14,810 of 16,539 by trust here, #15,217 by citations
Whom J. Larson trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts J. Larson overall
Papers from J. Larson's perspective
Ordered by how strongly the researchers J. Larson trusts endorse each paper. Same corpus, a different order for every researcher.
- Metal‐Semiconductor Contacts
- A computational study of thin-body, double-gate, Schottky barrier MOSFETs
- The soft error problem: an architectural perspective (International Symposium on High-Performance Computer Architecture)
- Complementary silicide source/drain thin-body MOSFETs for the 20 nm gate length regime (International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138))
- Theory of ballistic nanotransistors
- Benchmarking nanotechnology for high-performance and low-power logic transistor applications (IEEE transactions on nanotechnology)
- On the mobility versus drain current relation for a nanoscale MOSFET (IEEE Electron Device Letters)
- High-κ dielectrics for advanced carbon-nanotube transistors and logic gates
- Luttinger liquid theory as a model of the gigahertz electrical properties of carbon nanotubes
- nanoMOS 2.5: A two-dimensional simulator for quantum transport in double-gate MOSFETs
Their papers
- Overview and status of metal S/D Schottky-barrier MOSFET technology (2006) — 472 citations