Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering

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Considerations for Ultimate CMOS Scaling (2012, background): “With either path, there is some concern that a thinner IL may degrade the mobility due to remote phonon carrier scattering [93].”
A Physical Model of the Temperature Dependence of the Current Through $\hbox{SiO}_{2}\hbox{/}\hbox{HfO}_{2}$ Stacks (2011, neutral): “, the optical phonons are considered [29]).”
High-/spl kappa//metal-gate stack and its MOSFET characteristics (2004, background): “The authors are with Components Research, Logic Technology Development, Intel Corporation, Hillsboro, OR 97124 USA (e-mail: robert.s.chau@ intel.com).”
Modeling of Surface-Roughness Scattering in Ultrathin-Body SOI MOSFETs (2007, background): “The general expression for the xx component of the mobility tensor for the nth subband can be written as [6], [36]”
Oxides, Oxides, and More Oxides: High-κ Oxides, Ferroelectrics, Ferromagnetics, and Multiferroics (2009, background): “166 Figure 7 compares values of the effective electron mobility in the inversion layer at the interface between Si and an infinitely thick film of several insulators.”
Phonon-polaritonics: enabling powerful capabilities for infrared photonics (2019, background): “25 SiO2, like quartz, possesses multiple PhP oscillations; see [309].”