Mechanism of Electron Trapping and Characteristics of Traps in $\hbox{HfO}_{2}$ Gate Stacks

By Gennadi Bersuker, J. H. Sim, Chang Seo Park, C. Young, S. Nadkarni, R. Choi, B. Lee. IEEE transactions on device and materials reliability, 2007

144 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/6bb9d61b27e02c8069dbaff085f0f05034746f47

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In Electrical and Electronic Engineering

1. Kelin J. Kuhn
2. Bevan M. Baas
3. Aaron Stillmaker
4. Qiang Li
5. Kei May Lau

Citations in the corpus

• BTI reliability of 45 nm high-K + metal-gate process technology (2008, background): “In addition to the PMOS NBTI, NMOS PBTI degradation has been observed [1].”