Seonghoon Jin
Electrical and Electronic Engineering · 2006–2007
A researcher in the Science corpus: 3 papers; trusts 1 researcher and is trusted by 0 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 34 citations into it
- Atomic and Molecular Physics, and Optics — 10 citations into it
Whom Seonghoon Jin trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Seonghoon Jin overall
Papers from Seonghoon Jin's perspective
Ordered by how strongly the researchers Seonghoon Jin trusts endorse each paper. Same corpus, a different order for every researcher.
- On experimental determination of carrier velocity in deeply scaled NMOS: how close to the thermal limit? (IEEE Electron Device Letters)
- Self-Consistent Equations Including Exchange and Correlation Effects
- Inhomogeneous Electron Gas
- Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering
- Carrier scattering induced by thickness fluctuation of silicon-on-insulator film in ultrathin-body metal–oxide–semiconductor field-effect transistors
- Fabrication and mobility characteristics of ultra-thin strained Si directly on insulator (SSDOI) MOSFETs (IEEE International Electron Devices Meeting 2003)
- Experimental study on carrier transport mechanism in ultrathin-body SOI nand p-MOSFETs with SOI thickness less than 5 nm (Digest. International Electron Devices Meeting,)
- Device scaling limits of Si MOSFETs and their application dependencies (Proceedings of the IEEE)
- On the performance limits for Si MOSFETs: a theoretical study
- Six-band k⋅p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness
Their papers
- A three-dimensional simulation of quantum transport in silicon nanowire transistor in the presence of electron-phonon interactions (2006) — 182 citations
- Modeling of Surface-Roughness Scattering in Ultrathin-Body SOI MOSFETs (2007) — 156 citations
- Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity (2007) — 312 citations