Massimo V. Fischetti
IBM Journal of Research and Development · 2001–2007
A researcher in the Science corpus: 10 papers; trusts 0 researchers and is trusted by 22 researchers here, as inferred from the citation graph.
Whom Massimo V. Fischetti trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Massimo V. Fischetti overall
- Seonghoon Jin
- E. Wang
- S. Thompson
- Ting-Wei Tang
- John Robertson
- David Esseni
- Kelin J. Kuhn
- H. Philip Wong
- Douglas J. Paul
- Philippe Matagne
Papers from Massimo V. Fischetti's perspective
Ordered by how strongly the researchers Massimo V. Fischetti trusts endorse each paper. Same corpus, a different order for every researcher.
- On experimental determination of carrier velocity in deeply scaled NMOS: how close to the thermal limit? (IEEE Electron Device Letters)
- Fabrication and mobility characteristics of ultra-thin strained Si directly on insulator (SSDOI) MOSFETs (IEEE International Electron Devices Meeting 2003)
- Experimental study on carrier transport mechanism in ultrathin-body SOI nand p-MOSFETs with SOI thickness less than 5 nm (Digest. International Electron Devices Meeting,)
- Device scaling limits of Si MOSFETs and their application dependencies (Proceedings of the IEEE)
- The effective drive current in CMOS inverters (Digest. International Electron Devices Meeting,)
- Six-band k⋅p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness
- Limits to binary logic switch scaling - a gedanken model (Proceedings of the IEEE)
- Tri-Gate fully-depleted CMOS transistors: fabrication, design and layout (2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407))
- Self-Consistent Equations Including Exchange and Correlation Effects
- Inhomogeneous Electron Gas
Their papers
- Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering (2001) — 738 citations
- Six-band k⋅p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness (2003) — 480 citations
- Long-range Coulomb interactions in small Si devices. Part II. Effective electron mobility in thin-oxide structures (2001) — 137 citations
- Charge trapping related threshold voltage instabilities in high permittivity gate dielectric stacks (2003) — 302 citations
- Long-range Coulomb interactions in small Si devices. Part I: Performance and reliability (2001) — 148 citations
- Silicon CMOS devices beyond scaling (2006) — 464 citations
- Modeling of Surface-Roughness Scattering in Ultrathin-Body SOI MOSFETs (2007) — 156 citations
- Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity (2007) — 312 citations
- On the enhanced electron mobility in strained-silicon inversion layers (2002) — 191 citations
- Monte Carlo simulation of double-gate silicon-on-insulator inversion layers: The role of volume inversion (2001) — 156 citations