Strain-induced polarization in wurtzite III-nitride semipolar layers

By A. Romanov, T. Baker, Shuji Nakamura, J. Speck. 2006

696 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Condensed Matter Physics, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/28a69511f97ad90a2162119ba0f932950e68b280

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

1. Steven P. DenBaars
2. Shuji Nakamura
3. B. Baliga

In Condensed Matter Physics

1. Steven P. DenBaars
2. Umesh K. Mishra
3. Shuji Nakamura
4. H. Masui
5. J. Speck
6. B. Baliga
7. Srabanti Chowdhury

In Mechanics of Materials

1. Steven P. DenBaars
2. Umesh K. Mishra
3. Shuji Nakamura

Citations in the corpus

• Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting (2013, background): “2 presents a calculation of the total polarization discontinuity in the growth direction ( z) versus inclination angle from the -plane for a coherently strained layer on GaN [20].”
• A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability (2018, methodology): “For the simulation of the AlGaN/GaN HEMTs, the most important work is to solve the 2DEG concentration which is generated by spontaneous polarization (Psp) and piezoelectric polarization (Ppe) [141], as shown in Figure 8.”
• Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges (2010, result): “2 is an example result of these studies [27], [34].”