Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

By J. Ibbetson, P. Fini, K. Ness, Steven P. DenBaars, J. Speck, Umesh K. Mishra. 2000

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Surface-related drain current dispersion effects in AlGaN-GaN HEMTs (2004, background): “As pointed out in [14], overall charge neutrality within the AlGaN–GaN structure requires the two-dimensional (2–D) electron gas (2DEG) at the AlGaN–GaN heterointerface to be balanced, at equilibrium, by an equal, positive charge in”
AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications (2008, background): “duce high-density and high-mobility 2-D electron gas (2DEG) [3], [4], which effectively decreases the ON-state resistance and, thus, reduces the loss of power transistors.”
Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications (2006, background): “The relation between and is given by [16]”
Trapping Effects in the Transient Response of AlGaN/GaN HEMT Devices (2007, methodology): “A basic graphical scheme of space charge components in a HEMT device [10], [11], [25] is presented in Fig.”