Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices

By R. Farrell, E. Young, Feng Wu, Steven P. DenBaars, J. Speck. 2012

276 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Materials Chemistry, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/8a3b58d708e97fe9a4a1b9bbedd0d97e231e41c4

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Steven P. DenBaars
2. Umesh K. Mishra

In Materials Chemistry

1. Steven P. DenBaars

In Mechanics of Materials

1. Steven P. DenBaars

Citations in the corpus

• Vertical Power p-n Diodes Based on Bulk GaN (2015, background): “These hillocks have been attributed to spiral growth around a screw dislocation [34], [35].”
• Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting (2013, background): “However, known issues with basal plane stacking faults [33], surface morphology [33], carrier localization and broadened emission [34], and indium uptake [35] on nonpolar motivate further examination of semipolar .”