Improved electroluminescence on nonpolar m ‐plane InGaN/GaN quantum wells LEDs
By Kwangchoong Kim, M. Schmidt, H. Sato, Feng Wu, N. Fellows, M. Saito, K. Fujito, J. Speck, Shuji Nakamura, Steven P. DenBaars. 2007
136 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/a676292b5f92086935f3052d256fc22e9c1f20ad
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Atomic and Molecular Physics, and Optics
In Condensed Matter Physics
In Materials Chemistry
Citations in the corpus
- Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells (2009, background): “External quantum efficiencies (EQEs) of nonpolar LEDs grown on m-plane native GaN substrates have been reported and the peak EQE of the LED operating at λ ∼ 407 nm was reported to be ∼40% [93], [94].”
- Research challenges to ultra‐efficient inorganic solid‐state lighting (2007, background): “Certainly, this apparent insensitivity of InGaN LEDs to TDs is of tremendous benefit for SSL, but understanding of this phenomenon is incomplete.”
- LEDs for Solid-State Lighting: Performance Challenges and Recent Advances (2009, background): “Many reports have confirmed that nonpolar InGaN LEDs show improved wavelength stability with increasing current compared to c-plane LEDs [23]–[25].”