Why Is FE–HfO2 More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective
By Nanbo Gong, T. Ma. IEEE Electron Device Letters, 2016
163 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/7b41758b7522edac93f0bdf882de59a1956064f4
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In Electrical and Electronic Engineering
- Supriyo Datta
- Souvik Mahapatra
- Patrick Polakowski
- R. Clark
- Mark S. Lundstrom
- Shimeng Yu
- Eric Pop
- Anisur Rahman
Citations in the corpus
- High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty (2018, background): “This improvement can be understood by considering the effect of altering the IL on the two main components responsible for retention loss in FeFET, [8], namely, the depolarization field and charge trapping.”
- Critical Role of Interlayer in Hf0.5Zr0.5O2 Ferroelectric FET Nonvolatile Memory Performance (2018, background): “Two factors affect MW degradation, depolarization field, and charge trapping, enhanced by the IL field [19].”