A Study of Endurance Issues in HfO2-Based Ferroelectric Field Effect Transistors: Charge Trapping and Trap Generation

By Nanbo Gong, T. Ma. IEEE Electron Device Letters, 2018

178 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/fc7795d1c544f3d2d28df0048c351fba510289f4

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In Electrical and Electronic Engineering

1. Patrick Polakowski

Citations in the corpus

• High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty (2018, background): “6(b) is another factor toward the observed degradation [15].”