Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects
By Johannes Müller, Patrick Polakowski, Stefan Mueller, Thomas Mikolajick. 2015
376 citations recorded by the source corpus.
Bound to complex perovskite systems, ferroelectric random access memory (FRAM) suffers from limited CMOS-compatibility and faces severe scaling issues in today’s and future technology nodes. Nevertheless, compared to its current-driven non-volatile memory contenders, the field-driven FRAM excels in terms of low voltage operation and power consumption and therewith has managed to claim embedded as well as stand-alone niche markets. However, in order to overcome this restricted field of application, a material innovation is needed. With the ability to engineer ferroelectricity in HfO2, a high-k dielectric well established in memory and logic devices, a new material choice for improved manufacturability and scalability of future 1T and 1T-1C ferroelectric memories has emerged. This paper reviews the recent progress in this emerging field and critically assesses its current and future potential. Suitable memory concepts as well as new applications will be proposed accordingly. Moreover, an empirical description of the ferroelectric stabilization in HfO2 will be given, from which additional dopants as well as alternative stabilization mechanism for this phenomenon can be derived. © The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial No Derivatives 4.0 License (CC BY-NC-ND, http://creativecommons.org/licenses/by-nc-nd/4.0/),
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/f2ab42909e86e052e7e2bbd6bc106997bace427d
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Citations in the corpus
- Why Is FE–HfO2 More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective (2016, methodology): “2, for the 10nm HfO2 ferroelectric layer, the calculated depolarization field is comparable to its coercive field (1MV/cm [11]),”