Long-range Coulomb interactions in small Si devices. Part I: Performance and reliability

By Massimo V. Fischetti, S. Laux. 2001

148 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/1132197e335422d9b36b8e1678ab727ed48c6fcb

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Wilfried E. Haensch
2. Massimo V. Fischetti
3. Edward J. Nowak
4. Arvind Kumar
5. Ethan C. Ahn
6. Seonghoon Jin
7. Ting-Wei Tang

Citations in the corpus

• Silicon CMOS devices beyond scaling (2006, background): “Channel mobility in MOSFETs is trending toward lower values due to higher vertical fields [9, 10].”