Monte Carlo simulation of double-gate silicon-on-insulator inversion layers: The role of volume inversion

By F. Gámiz, Massimo V. Fischetti. 2001

156 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/f41ad16487eb67552d1b34b76cde765c3f237ca3