Long-range Coulomb interactions in small Si devices. Part II. Effective electron mobility in thin-oxide structures
By Massimo V. Fischetti. 2001
137 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/89ce430f82dcdfb738c747022cb1a8ad13711880
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In Atomic and Molecular Physics, and Optics
- Seonghoon Jin
- Ting-Wei Tang
- Borna Obradovic
- Martin D. Giles
- Lucian Shifren
- Philippe Matagne
- E. Wang
- M. Stettler
In Electrical and Electronic Engineering
- Seonghoon Jin
- Ting-Wei Tang
- Lucian Shifren
- Borna Obradovic
- Roza Kotlyar
- Martin D. Giles
- Philippe Matagne
- M. Stettler
Citations in the corpus
- Physics of Hole Transport in Strained Silicon MOSFET Inversion Layers (2006, methodology): “Once the momentum relaxation rates are obtained, a 2 × 2 hole mobility tensor is computed using the Kubo–Greenwood formula [23]”
- Modeling of Surface-Roughness Scattering in Ultrathin-Body SOI MOSFETs (2007, methodology): “By taking into account the first order change of the wavefunction due to the scattering potential, we can obtain the screened matrix element Ṽq;λλ′ in terms of the unscreened matrix element Vq;λλ′ as [5], [31]”