Silicon CMOS devices beyond scaling

By Wilfried E. Haensch, Edward J. Nowak, R. Dennard, P. Solomon, A. Bryant, O. Dokumaci, Arvind Kumar, Xinlin Wang, Jeffrey B. Johnson, Massimo V. Fischetti. IBM Journal of Research and Development, 2006

464 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/e50047669272579e6571e36119b92dffcc3ff1c3

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In Electrical and Electronic Engineering

1. Eric Pop
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Citations in the corpus

• Analysis of Self-Heating Effects in Ultrathin-Body SOI MOSFETs by Device Simulation (2008, background): “In [55], the dynamic dissipated power under realistic switching conditions has been estimated to PDyn = 0.13 · PDC.”
• Co-designing electronics with microfluidics for more sustainable cooling (2020, background): “Thermal management is one of the main challenges for the future of electronics [1]–[5].”
• Universality of Short-Channel Effects in Undoped-Body Silicon Nanowire MOSFETs (2010, background): “Furthermore, data from NW FETs and undoped-body ETSOI MOSFETs with different SOI thicknesses [11] demonstrate the universality of short-channel effects in undoped-body FDSOI MOSFETs as a function of LEFF/λ, where LEFF is the effective channel length and λ is the relevant electrostatic scaling length”
• Energy dissipation and transport in nanoscale devices (2010, background): “In the average modern microprocessor the dissipated power is due, in approximately equal parts, to both leakage (or “sleep”) power and active (dynamic) switching power [4], as detailed in Section 2.”