S. Thompson

Electrical and Electronic Engineering · IEEE Electron Device Letters · 2004–2010

A researcher in the Science corpus: 8 papers; trusts 1 researcher and is trusted by 0 researchers here, as inferred from the citation graph.

Subfields

Whom S. Thompson trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

  1. Massimo V. Fischetti
  2. Mark S. Lundstrom

Who trusts S. Thompson overall

  1. Markus Niederberger
  2. Kelin J. Kuhn
  3. C. Buzea

Papers from S. Thompson's perspective

Ordered by how strongly the researchers S. Thompson trusts endorse each paper. Same corpus, a different order for every researcher.

  1. Six-band k⋅p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness
  2. Fabrication and mobility characteristics of ultra-thin strained Si directly on insulator (SSDOI) MOSFETs (IEEE International Electron Devices Meeting 2003)
  3. Key differences for process-induced uniaxial vs. substrate-induced biaxial stressed Si and Ge channel MOSFETs (IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.)
  4. Fundamentals of Carrier Transport, 2nd edn
  5. CMOS design near the limit of scaling
  6. Dual stress liner for high performance sub-45nm gate length SOI CMOS manufacturing (IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.)
  7. Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime (IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.)
  8. A 45nm Logic Technology with High-k+Metal Gate Transistors, Strained Silicon, 9 Cu Interconnect Layers, 193nm Dry Patterning, and 100% Pb-free Packaging (2007 IEEE International Electron Devices Meeting)
  9. Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors
  10. Mechanical stress effect of etch-stop nitride and its impact on deep submicron transistor design (International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138))

Their papers