Limits to binary logic switch scaling - a gedanken model
By Victor V. Zhirnov, Ralph K. Cavin III, James A. Hutchby, George Bourianoff. Proceedings of the IEEE, 2003
479 citations recorded by the source corpus.
Subfields: Artificial Intelligence, Electrical and Electronic Engineering, Hardware and Architecture
View Paper: https://www.semanticscholar.org/paper/a4ade235a98c7380122759e6f53038342c764a62
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In Artificial Intelligence
In Electrical and Electronic Engineering
- Rainer Waser
- Masakazu Aono
- Ian A. Young
- Wilfried E. Haensch
- Massimo V. Fischetti
- Igor L. Markov
- Edward J. Nowak
- Oleg A. Mukhanov
In Hardware and Architecture
Citations in the corpus
- Nanoionics-based resistive switching memories. (2007, background): “One ultimate limit will be given by the tunnelling distance between neighbouring cells as well as the leakage current from the word and bit line, again potentially dominated by tunnellin”
- In search of "Forever," continued transistor scaling one new material at a time (2005, background): “Fortunately, the limits for a 30-nm planar Si MOSFET are caused by materials and the device structure and are not hard quantum mechanical limits [20],”
- Energy-Efficient Single Flux Quantum Technology (2011, background): “It is argued that even if entirely different electron transport devices are invented for digital logic, they will not exceed the performance and integration densities obtainable with CMOS [4].”
- Benchmarking of Beyond-CMOS Exploratory Devices for Logic Integrated Circuits (2015, background): “I. INTRODUCTION SUCCESSFUL scaling of CMOS field-effect transis-tors (FETs) has occurred over more than four decades according to the cadence of Moore’s law [1] and has now reached gate lengths of 20 nm in [2].”
- Synthesis of quantum-logic circuits (2004, unknown): “A quantitative analysis of these phenomena leads experts from NCSU, SRC and Intel [36] to derive fundamental limitations on the scalability of any computing device which moves electrons.”
- Thermal Interface Materials: Historical Perspective, Status, and Future Directions (2006, background): “The projections for heat generation from the chip indicate that both the total power (Q )a nd the heat flux (q )a re going to increase [ 7 ].”
- Overview of Beyond-CMOS Devices and a Uniform Methodology for Their Benchmarking (2013, background): “From the ITRS projections it is apparent that the scaling will be influenced by fundamental physical limits of device switching [2].”
- Limits on fundamental limits to computation (2014, background): “The study in [63] explores a general binary-logic switch model with binary states represented by two quantum wells separated by a potential barrier .”
- Silicon CMOS devices beyond scaling (2006, background): “Why is this so much larger than Zhirnov’s limit [56]? First, the assumption for m (Zhirnov assumed m ¼ m0); next, our assumption of the equality of tunneling and thermionic emission currents, whereas Zhirnov assumed an almost transparent barrier [ 56 ]; and finally the use of a parabolic rather than”